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Samsung launches 20nm 4Gb DDR3 memory chips

by on12 March 2014 1762 times

Samsung has started mass production of 4 Gb DDR3 memory chips in 20-nanometer manufacturing process.  According to the manufacturer, production of DRAM chips in fewer nanometer technology is more demanding job in relation to the NAND flash memory chips. While NAND in every cell requires only a transistor, 0DRAM memory must have both transistor and capacitor.

 

This is why Samsung has modified its production process that enabled the 20-nanometer production, and also has set the foundation for next-generation processes up to 10 nm. The new 4 Gb chips will offer up to 25% lower energy consumption compared to the 25-nanometer ones.

Young-Hyun Jun, Samsung Electronics EVP of memory sales and marketing said that "Samsung will continue to deliver next generation DRAM and green memory solutions ahead of the competition, while contributing to the growth of the global IT market in close cooperation with our major customers."

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Last modified on 12 March 2014
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