Tuesday, 11 June 2013 20:21

Bigger memory for mobile devices

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skhynix

SK Hynix have managed to produce a more capacitive LPDDR3 memory in 20-nanometer generation of manufacturing process. LPDDR3 has higher speed and lower consumption than the previous LPDDR2 that is still very common in today's mobile devices.

New LPDDR3 memory from Hynix has a capacity of 8 Gb, and piling more of these tiles can produce memory chip capacity of 4 GB, which has an even lower level height compared to the existing chips based on 4-gigabyte memory. The solution operates at a frequency of 2,133 MHz and a voltage of 1.2 V and achieves a bandwidth of 17 GB /s in the standard dual channel operation.

SK Hynix memory will be available in PoP, eMMC and other packaging suitable for installation on mobile devices such are Ultrabooks, tablets and smartphones, and the start of mass production of these chips is expected later this year.

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Read 2090 times Last modified on Tuesday, 11 June 2013 20:26

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