Saturday01 April 2023

Displaying items by tag: MoS2


As companies race towards smaller and faster processors they continually run into a problem. This problem is one of current leakage. As the process used to make the individual transistors shrinks current leakage grows. There have been many concepts presented to combat this leakage some of which have been successful such as AMD’s SOI (Silicon on Insulator), Intel’s High-K Metal Gate and Tri-Gate Transistors. These work fairly well down to 28nm, but start to become less efficient at 22nm and below. Most agree that to move forward with smaller transistors a new material is needed.

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